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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1695438
DC FieldValue
dc.titleHigh-coercivity Co-ferrite thin films on (100)-SiO 2 substrate
dc.contributor.authorWang, Y.C.
dc.contributor.authorDing, J.
dc.contributor.authorYi, J.B.
dc.contributor.authorLiu, B.H.
dc.contributor.authorYu, T.
dc.contributor.authorShen, Z.X.
dc.date.accessioned2014-10-16T09:27:40Z
dc.date.available2014-10-16T09:27:40Z
dc.date.issued2004-04-05
dc.identifier.citationWang, Y.C., Ding, J., Yi, J.B., Liu, B.H., Yu, T., Shen, Z.X. (2004-04-05). High-coercivity Co-ferrite thin films on (100)-SiO 2 substrate. Applied Physics Letters 84 (14) : 2596-2598. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1695438
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96800
dc.description.abstractThe deposition of Co-ferrite films on SiO 2 single-crystal substrates was discussed. These films were prepared by the rf sputtering with a deposition rate of 0.2 Å per second. The preparation of a sputtering target with a stoichiometric composition of CoFe 2O 4 by sintering at 1300°C was also demonstrated. These films were annealed in an air atmosphere at a temperature between 500 and 1200°C between 5 and 120 min.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1695438
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1695438
dc.description.sourcetitleApplied Physics Letters
dc.description.volume84
dc.description.issue14
dc.description.page2596-2598
dc.description.codenAPPLA
dc.identifier.isiut000220586800042
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