Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1695438
Title: High-coercivity Co-ferrite thin films on (100)-SiO 2 substrate
Authors: Wang, Y.C.
Ding, J. 
Yi, J.B. 
Liu, B.H. 
Yu, T. 
Shen, Z.X. 
Issue Date: 5-Apr-2004
Source: Wang, Y.C., Ding, J., Yi, J.B., Liu, B.H., Yu, T., Shen, Z.X. (2004-04-05). High-coercivity Co-ferrite thin films on (100)-SiO 2 substrate. Applied Physics Letters 84 (14) : 2596-2598. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1695438
Abstract: The deposition of Co-ferrite films on SiO 2 single-crystal substrates was discussed. These films were prepared by the rf sputtering with a deposition rate of 0.2 Å per second. The preparation of a sputtering target with a stoichiometric composition of CoFe 2O 4 by sintering at 1300°C was also demonstrated. These films were annealed in an air atmosphere at a temperature between 500 and 1200°C between 5 and 120 min.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96800
ISSN: 00036951
DOI: 10.1063/1.1695438
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