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|Title:||Environment of the Pbcenter at the Si(111)/oxide interface||Authors:||Ong, C.K.
|Issue Date:||Jun-1993||Citation:||Ong, C.K.,Harker, A.H.,Stoneham, A.M. (1993-06). Environment of the Pbcenter at the Si(111)/oxide interface. Interface Science 1 (2) : 139-146. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00203603||Abstract:||We assess several models for the environment of the Pbcenter (Si dangling bond center) at the interface of Si(111) with its oxide. The comparison of hyperfine constants observed with those predicted using large cluster models favors a local structure in which there is an Si-Si bond within the oxide close to the Si dangling bond. Such Si-Si bonds are also suggested by a number of other experiments and are consistent with the "reactive layer" model proposed to rationalize a range of oxidation studies. © 1993 Kluwer Academic Publishers.||Source Title:||Interface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/96502||ISSN:||09277056||DOI:||10.1007/BF00203603|
|Appears in Collections:||Staff Publications|
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