Please use this identifier to cite or link to this item: https://doi.org/10.1007/BF00203603
Title: Environment of the Pbcenter at the Si(111)/oxide interface
Authors: Ong, C.K. 
Harker, A.H.
Stoneham, A.M.
Keywords: computer simulation
defects
hyperfine interactions
oxidation
Silicon
Issue Date: Jun-1993
Source: Ong, C.K.,Harker, A.H.,Stoneham, A.M. (1993-06). Environment of the Pbcenter at the Si(111)/oxide interface. Interface Science 1 (2) : 139-146. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00203603
Abstract: We assess several models for the environment of the Pbcenter (Si dangling bond center) at the interface of Si(111) with its oxide. The comparison of hyperfine constants observed with those predicted using large cluster models favors a local structure in which there is an Si-Si bond within the oxide close to the Si dangling bond. Such Si-Si bonds are also suggested by a number of other experiments and are consistent with the "reactive layer" model proposed to rationalize a range of oxidation studies. © 1993 Kluwer Academic Publishers.
Source Title: Interface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/96502
ISSN: 09277056
DOI: 10.1007/BF00203603
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

15
checked on Mar 8, 2018

Page view(s)

31
checked on Mar 10, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.