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|Title:||Enhancement of room-temperature magnetoresistance in Sr2FeMoO6 by reducing its grain size and adjusting its tunnel-barrier thickness||Authors:||Yuan, C.L.
|Issue Date:||10-Feb-2003||Citation:||Yuan, C.L., Zhu, Y., Ong, P.P. (2003-02-10). Enhancement of room-temperature magnetoresistance in Sr2FeMoO6 by reducing its grain size and adjusting its tunnel-barrier thickness. Applied Physics Letters 82 (6) : 934-936. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1544066||Abstract:||The enhancement of room-temperature magnetoresistance in Sr2FeMoO6 with reduction of its grain size and adjusting its tunnel-barrier thickness was discussed. The grain boundary thickness effect of the sample was tested by adjusting the mixture ratio of the gaseous H2-Ar stream during annealing in fabrication stage. It was observed that an increase in the SrMoO4 impurity in the Sr2FeMoO6 matrix produces a larger number of grain boundary barriers and hence a larger low-field magnetoresistance (LFMR) effect, until the perlocation threshold is reached.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96476||ISSN:||00036951||DOI:||10.1063/1.1544066|
|Appears in Collections:||Staff Publications|
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