Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1544066
Title: Enhancement of room-temperature magnetoresistance in Sr2FeMoO6 by reducing its grain size and adjusting its tunnel-barrier thickness
Authors: Yuan, C.L. 
Zhu, Y. 
Ong, P.P. 
Issue Date: 10-Feb-2003
Citation: Yuan, C.L., Zhu, Y., Ong, P.P. (2003-02-10). Enhancement of room-temperature magnetoresistance in Sr2FeMoO6 by reducing its grain size and adjusting its tunnel-barrier thickness. Applied Physics Letters 82 (6) : 934-936. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1544066
Abstract: The enhancement of room-temperature magnetoresistance in Sr2FeMoO6 with reduction of its grain size and adjusting its tunnel-barrier thickness was discussed. The grain boundary thickness effect of the sample was tested by adjusting the mixture ratio of the gaseous H2-Ar stream during annealing in fabrication stage. It was observed that an increase in the SrMoO4 impurity in the Sr2FeMoO6 matrix produces a larger number of grain boundary barriers and hence a larger low-field magnetoresistance (LFMR) effect, until the perlocation threshold is reached.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96476
ISSN: 00036951
DOI: 10.1063/1.1544066
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