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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1544066
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dc.titleEnhancement of room-temperature magnetoresistance in Sr2FeMoO6 by reducing its grain size and adjusting its tunnel-barrier thickness
dc.contributor.authorYuan, C.L.
dc.contributor.authorZhu, Y.
dc.contributor.authorOng, P.P.
dc.date.accessioned2014-10-16T09:23:53Z
dc.date.available2014-10-16T09:23:53Z
dc.date.issued2003-02-10
dc.identifier.citationYuan, C.L., Zhu, Y., Ong, P.P. (2003-02-10). Enhancement of room-temperature magnetoresistance in Sr2FeMoO6 by reducing its grain size and adjusting its tunnel-barrier thickness. Applied Physics Letters 82 (6) : 934-936. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1544066
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96476
dc.description.abstractThe enhancement of room-temperature magnetoresistance in Sr2FeMoO6 with reduction of its grain size and adjusting its tunnel-barrier thickness was discussed. The grain boundary thickness effect of the sample was tested by adjusting the mixture ratio of the gaseous H2-Ar stream during annealing in fabrication stage. It was observed that an increase in the SrMoO4 impurity in the Sr2FeMoO6 matrix produces a larger number of grain boundary barriers and hence a larger low-field magnetoresistance (LFMR) effect, until the perlocation threshold is reached.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1544066
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1063/1.1544066
dc.description.sourcetitleApplied Physics Letters
dc.description.volume82
dc.description.issue6
dc.description.page934-936
dc.description.codenAPPLA
dc.identifier.isiut000180804100032
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