Please use this identifier to cite or link to this item:
|Title:||Current saturation in zero-bandgap, top-gated graphene field-effect transistors||Authors:||Meric, I.
|Issue Date:||Nov-2008||Citation:||Meric, I., Han, M.Y., Young, A.F., Ozyilmaz, B., Kim, P., Shepard, K.L. (2008-11). Current saturation in zero-bandgap, top-gated graphene field-effect transistors. Nature Nanotechnology 3 (11) : 654-659. ScholarBank@NUS Repository. https://doi.org/10.1038/nnano.2008.268||Abstract:||The novel electronic properties of graphene, including a linear energy dispersion relation and purely two-dimensional structure, have led to intense research into possible applications of this material in nanoscale devices. Here we report the first observation of saturating transistor characteristics in a graphene field-effect transistor. The saturation velocity depends on the charge-carrier concentration and we attribute this to scattering by interfacial phonons in the SiO2 layer supporting the graphene channels. Unusual features in the current-voltage characteristic are explained by a field-effect model and diffusive carrier transport in the presence of a singular point in the density of states. The electrostatic modulation of the channel through an efficiently coupled top gate yields transconductances as high as 150 μS μm-1 despite low on-off current ratios. These results demonstrate the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering. © 2008 Macmillan Publishers Limited. All rights reserved.||Source Title:||Nature Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/96143||ISSN:||17483387||DOI:||10.1038/nnano.2008.268|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 23, 2020
WEB OF SCIENCETM
checked on Jan 16, 2020
checked on Dec 28, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.