Please use this identifier to cite or link to this item: https://doi.org/10.1038/nnano.2008.268
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dc.titleCurrent saturation in zero-bandgap, top-gated graphene field-effect transistors
dc.contributor.authorMeric, I.
dc.contributor.authorHan, M.Y.
dc.contributor.authorYoung, A.F.
dc.contributor.authorOzyilmaz, B.
dc.contributor.authorKim, P.
dc.contributor.authorShepard, K.L.
dc.date.accessioned2014-10-16T09:19:58Z
dc.date.available2014-10-16T09:19:58Z
dc.date.issued2008-11
dc.identifier.citationMeric, I., Han, M.Y., Young, A.F., Ozyilmaz, B., Kim, P., Shepard, K.L. (2008-11). Current saturation in zero-bandgap, top-gated graphene field-effect transistors. Nature Nanotechnology 3 (11) : 654-659. ScholarBank@NUS Repository. https://doi.org/10.1038/nnano.2008.268
dc.identifier.issn17483387
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96143
dc.description.abstractThe novel electronic properties of graphene, including a linear energy dispersion relation and purely two-dimensional structure, have led to intense research into possible applications of this material in nanoscale devices. Here we report the first observation of saturating transistor characteristics in a graphene field-effect transistor. The saturation velocity depends on the charge-carrier concentration and we attribute this to scattering by interfacial phonons in the SiO2 layer supporting the graphene channels. Unusual features in the current-voltage characteristic are explained by a field-effect model and diffusive carrier transport in the presence of a singular point in the density of states. The electrostatic modulation of the channel through an efficiently coupled top gate yields transconductances as high as 150 μS μm-1 despite low on-off current ratios. These results demonstrate the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering. © 2008 Macmillan Publishers Limited. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1038/nnano.2008.268
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1038/nnano.2008.268
dc.description.sourcetitleNature Nanotechnology
dc.description.volume3
dc.description.issue11
dc.description.page654-659
dc.identifier.isiut000261330500011
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