Please use this identifier to cite or link to this item: https://doi.org/10.1038/nnano.2008.268
Title: Current saturation in zero-bandgap, top-gated graphene field-effect transistors
Authors: Meric, I.
Han, M.Y.
Young, A.F.
Ozyilmaz, B. 
Kim, P.
Shepard, K.L.
Issue Date: Nov-2008
Citation: Meric, I., Han, M.Y., Young, A.F., Ozyilmaz, B., Kim, P., Shepard, K.L. (2008-11). Current saturation in zero-bandgap, top-gated graphene field-effect transistors. Nature Nanotechnology 3 (11) : 654-659. ScholarBank@NUS Repository. https://doi.org/10.1038/nnano.2008.268
Abstract: The novel electronic properties of graphene, including a linear energy dispersion relation and purely two-dimensional structure, have led to intense research into possible applications of this material in nanoscale devices. Here we report the first observation of saturating transistor characteristics in a graphene field-effect transistor. The saturation velocity depends on the charge-carrier concentration and we attribute this to scattering by interfacial phonons in the SiO2 layer supporting the graphene channels. Unusual features in the current-voltage characteristic are explained by a field-effect model and diffusive carrier transport in the presence of a singular point in the density of states. The electrostatic modulation of the channel through an efficiently coupled top gate yields transconductances as high as 150 μS μm-1 despite low on-off current ratios. These results demonstrate the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering. © 2008 Macmillan Publishers Limited. All rights reserved.
Source Title: Nature Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/96143
ISSN: 17483387
DOI: 10.1038/nnano.2008.268
Appears in Collections:Staff Publications

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