Correlation between the bulk modulus and the transition pressure in semiconductors

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.matlet.2005.02.011

Title:	Correlation between the bulk modulus and the transition pressure in semiconductors
Authors:	Al-Douri, Y. Abid, H. Aourag, H.
Keywords:	Bulk modulus Semiconductor Transition pressure
Issue Date:	1-Jul-2005
Citation:	Al-Douri, Y., Abid, H., Aourag, H. (2005-07-01). Correlation between the bulk modulus and the transition pressure in semiconductors. Materials Letters 59 (16) : 2032-2034. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2005.02.011
Abstract:	The correlation between the bulk modulus B 0 and the transition pressure in semiconductors was analyzed. The transition pressure from zinc blende to β-Sn structure was used to calculate the bulk modulus. It was found that for the II-VI semiconductors, the differences between the experiment and the calculated values were less than 5% except for CdS and CdTe where the coincidence and emergence cases happened. It was also found the calculated estimations were larger than the measured values for the III-VI semiconductors except for GaP, and the tendency was similar for the II-VI semiconductors.
Source Title:	Materials Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/96110
ISSN:	0167577X
DOI:	10.1016/j.matlet.2005.02.011
Appears in Collections:	Staff Publications

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