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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.matlet.2005.02.011
DC FieldValue
dc.titleCorrelation between the bulk modulus and the transition pressure in semiconductors
dc.contributor.authorAl-Douri, Y.
dc.contributor.authorAbid, H.
dc.contributor.authorAourag, H.
dc.date.accessioned2014-10-16T09:19:35Z
dc.date.available2014-10-16T09:19:35Z
dc.date.issued2005-07-01
dc.identifier.citationAl-Douri, Y., Abid, H., Aourag, H. (2005-07-01). Correlation between the bulk modulus and the transition pressure in semiconductors. Materials Letters 59 (16) : 2032-2034. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2005.02.011
dc.identifier.issn0167577X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96110
dc.description.abstractThe correlation between the bulk modulus B 0 and the transition pressure in semiconductors was analyzed. The transition pressure from zinc blende to β-Sn structure was used to calculate the bulk modulus. It was found that for the II-VI semiconductors, the differences between the experiment and the calculated values were less than 5% except for CdS and CdTe where the coincidence and emergence cases happened. It was also found the calculated estimations were larger than the measured values for the III-VI semiconductors except for GaP, and the tendency was similar for the II-VI semiconductors.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.matlet.2005.02.011
dc.sourceScopus
dc.subjectBulk modulus
dc.subjectSemiconductor
dc.subjectTransition pressure
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.matlet.2005.02.011
dc.description.sourcetitleMaterials Letters
dc.description.volume59
dc.description.issue16
dc.description.page2032-2034
dc.description.codenMLETD
dc.identifier.isiut000229103600015
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