Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.matlet.2005.02.011
Title: Correlation between the bulk modulus and the transition pressure in semiconductors
Authors: Al-Douri, Y. 
Abid, H.
Aourag, H.
Keywords: Bulk modulus
Semiconductor
Transition pressure
Issue Date: 1-Jul-2005
Source: Al-Douri, Y., Abid, H., Aourag, H. (2005-07-01). Correlation between the bulk modulus and the transition pressure in semiconductors. Materials Letters 59 (16) : 2032-2034. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2005.02.011
Abstract: The correlation between the bulk modulus B 0 and the transition pressure in semiconductors was analyzed. The transition pressure from zinc blende to β-Sn structure was used to calculate the bulk modulus. It was found that for the II-VI semiconductors, the differences between the experiment and the calculated values were less than 5% except for CdS and CdTe where the coincidence and emergence cases happened. It was also found the calculated estimations were larger than the measured values for the III-VI semiconductors except for GaP, and the tendency was similar for the II-VI semiconductors.
Source Title: Materials Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96110
ISSN: 0167577X
DOI: 10.1016/j.matlet.2005.02.011
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