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https://doi.org/10.1016/j.matlet.2005.02.011
Title: | Correlation between the bulk modulus and the transition pressure in semiconductors |
Authors: | Al-Douri, Y. Abid, H. Aourag, H. |
Keywords: | Bulk modulus Semiconductor Transition pressure |
Issue Date: | 1-Jul-2005 |
Citation: | Al-Douri, Y., Abid, H., Aourag, H. (2005-07-01). Correlation between the bulk modulus and the transition pressure in semiconductors. Materials Letters 59 (16) : 2032-2034. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2005.02.011 |
Abstract: | The correlation between the bulk modulus B 0 and the transition pressure in semiconductors was analyzed. The transition pressure from zinc blende to β-Sn structure was used to calculate the bulk modulus. It was found that for the II-VI semiconductors, the differences between the experiment and the calculated values were less than 5% except for CdS and CdTe where the coincidence and emergence cases happened. It was also found the calculated estimations were larger than the measured values for the III-VI semiconductors except for GaP, and the tendency was similar for the II-VI semiconductors. |
Source Title: | Materials Letters |
URI: | http://scholarbank.nus.edu.sg/handle/10635/96110 |
ISSN: | 0167577X |
DOI: | 10.1016/j.matlet.2005.02.011 |
Appears in Collections: | Staff Publications |
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