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|Title:||Correlation between the bulk modulus and the transition pressure in semiconductors||Authors:||Al-Douri, Y.
|Issue Date:||1-Jul-2005||Citation:||Al-Douri, Y., Abid, H., Aourag, H. (2005-07-01). Correlation between the bulk modulus and the transition pressure in semiconductors. Materials Letters 59 (16) : 2032-2034. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2005.02.011||Abstract:||The correlation between the bulk modulus B 0 and the transition pressure in semiconductors was analyzed. The transition pressure from zinc blende to β-Sn structure was used to calculate the bulk modulus. It was found that for the II-VI semiconductors, the differences between the experiment and the calculated values were less than 5% except for CdS and CdTe where the coincidence and emergence cases happened. It was also found the calculated estimations were larger than the measured values for the III-VI semiconductors except for GaP, and the tendency was similar for the II-VI semiconductors.||Source Title:||Materials Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96110||ISSN:||0167577X||DOI:||10.1016/j.matlet.2005.02.011|
|Appears in Collections:||Staff Publications|
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