Band alignment and thermal stability of HfO2 gate dielectric on SiC

Abstract

The band alignment and thermal stability for HfO2 films on SiC with and without nitridation have been studied by using photoemission spectroscopy. The valence- and conduction-band offsets at HfO2 /4H-SiC interfaces were measured to be 1.02 and 1.53 eV, respectively. The atomic source nitridation improves interface thermal stability with nitrogen passivation for the oxygen vacancies in dielectric films and for the defects on SiC surface, but induces band gap reduction for the HfO2 dielectric layer and band alignment shift at the interface. Postnitridation annealing helps to improve the band offsets of dielectric film to have sufficient injection barrier. © 2008 American Institute of Physics.