Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2969061
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dc.titleBand alignment and thermal stability of HfO2 gate dielectric on SiC
dc.contributor.authorChen, Q.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorChai, J.W.
dc.contributor.authorZhang, Z.
dc.contributor.authorPan, J.S.
dc.contributor.authorWang, S.J.
dc.date.accessioned2014-10-16T09:16:30Z
dc.date.available2014-10-16T09:16:30Z
dc.date.issued2008
dc.identifier.citationChen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2008). Band alignment and thermal stability of HfO2 gate dielectric on SiC. Applied Physics Letters 93 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2969061
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95846
dc.description.abstractThe band alignment and thermal stability for HfO2 films on SiC with and without nitridation have been studied by using photoemission spectroscopy. The valence- and conduction-band offsets at HfO2 /4H-SiC interfaces were measured to be 1.02 and 1.53 eV, respectively. The atomic source nitridation improves interface thermal stability with nitrogen passivation for the oxygen vacancies in dielectric films and for the defects on SiC surface, but induces band gap reduction for the HfO2 dielectric layer and band alignment shift at the interface. Postnitridation annealing helps to improve the band offsets of dielectric film to have sufficient injection barrier. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2969061
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2969061
dc.description.sourcetitleApplied Physics Letters
dc.description.volume93
dc.description.issue5
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000258335900040
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