An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry

Please use this identifier to cite or link to this item: https://doi.org/10.1007/BF00355966

Title:	An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry
Authors:	Wee, A.T.S. Huan, C.H.A. Tan, K.L. Tan, R.S.K.
Issue Date:	Jan-1994
Citation:	Wee, A.T.S., Huan, C.H.A., Tan, K.L., Tan, R.S.K. (1994-01). An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry. Journal of Materials Science 29 (15) : 4037-4042. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00355966
Abstract:	The Ar+ ion-enhanced reaction of carbon tetrachloride (CCl4) on Si(100) at room temperature is investigated at primary ion energies of 2 and 9 keV using the secondary ion mass spectrometry (SIMS) technique. Static SIMS shows that CCl4 reacts with Si at room temperature. This surface reaction is enhanced by simultaneous sputtering with an Ar+ ion beam, the reaction rate being higher at 9 keV than at 2 keV. Possible products of surface reaction are discussed. © 1994 Chapman & Hall.
Source Title:	Journal of Materials Science
URI:	http://scholarbank.nus.edu.sg/handle/10635/95764
ISSN:	00222461
DOI:	10.1007/BF00355966
Appears in Collections:	Staff Publications

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