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|Title:||An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry|
|Authors:||Wee, A.T.S. |
|Citation:||Wee, A.T.S., Huan, C.H.A., Tan, K.L., Tan, R.S.K. (1994-01). An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry. Journal of Materials Science 29 (15) : 4037-4042. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00355966|
|Abstract:||The Ar+ ion-enhanced reaction of carbon tetrachloride (CCl4) on Si(100) at room temperature is investigated at primary ion energies of 2 and 9 keV using the secondary ion mass spectrometry (SIMS) technique. Static SIMS shows that CCl4 reacts with Si at room temperature. This surface reaction is enhanced by simultaneous sputtering with an Ar+ ion beam, the reaction rate being higher at 9 keV than at 2 keV. Possible products of surface reaction are discussed. © 1994 Chapman & Hall.|
|Source Title:||Journal of Materials Science|
|Appears in Collections:||Staff Publications|
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