Please use this identifier to cite or link to this item: https://doi.org/10.1007/BF00355966
Title: An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry
Authors: Wee, A.T.S. 
Huan, C.H.A. 
Tan, K.L. 
Tan, R.S.K.
Issue Date: Jan-1994
Citation: Wee, A.T.S., Huan, C.H.A., Tan, K.L., Tan, R.S.K. (1994-01). An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry. Journal of Materials Science 29 (15) : 4037-4042. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00355966
Abstract: The Ar+ ion-enhanced reaction of carbon tetrachloride (CCl4) on Si(100) at room temperature is investigated at primary ion energies of 2 and 9 keV using the secondary ion mass spectrometry (SIMS) technique. Static SIMS shows that CCl4 reacts with Si at room temperature. This surface reaction is enhanced by simultaneous sputtering with an Ar+ ion beam, the reaction rate being higher at 9 keV than at 2 keV. Possible products of surface reaction are discussed. © 1994 Chapman & Hall.
Source Title: Journal of Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/95764
ISSN: 00222461
DOI: 10.1007/BF00355966
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Jun 23, 2018

WEB OF SCIENCETM
Citations

3
checked on May 30, 2018

Page view(s)

46
checked on Jun 22, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.