Please use this identifier to cite or link to this item:
|Title:||An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry|
|Authors:||Wee, A.T.S. |
|Source:||Wee, A.T.S., Huan, C.H.A., Tan, K.L., Tan, R.S.K. (1994-01). An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry. Journal of Materials Science 29 (15) : 4037-4042. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00355966|
|Abstract:||The Ar+ ion-enhanced reaction of carbon tetrachloride (CCl4) on Si(100) at room temperature is investigated at primary ion energies of 2 and 9 keV using the secondary ion mass spectrometry (SIMS) technique. Static SIMS shows that CCl4 reacts with Si at room temperature. This surface reaction is enhanced by simultaneous sputtering with an Ar+ ion beam, the reaction rate being higher at 9 keV than at 2 keV. Possible products of surface reaction are discussed. © 1994 Chapman & Hall.|
|Source Title:||Journal of Materials Science|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 6, 2018
WEB OF SCIENCETM
checked on Jan 24, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.