Please use this identifier to cite or link to this item: https://doi.org/10.1007/BF00355966
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dc.titleAn investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry
dc.contributor.authorWee, A.T.S.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorTan, K.L.
dc.contributor.authorTan, R.S.K.
dc.date.accessioned2014-10-16T09:15:33Z
dc.date.available2014-10-16T09:15:33Z
dc.date.issued1994-01
dc.identifier.citationWee, A.T.S., Huan, C.H.A., Tan, K.L., Tan, R.S.K. (1994-01). An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry. Journal of Materials Science 29 (15) : 4037-4042. ScholarBank@NUS Repository. https://doi.org/10.1007/BF00355966
dc.identifier.issn00222461
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95764
dc.description.abstractThe Ar+ ion-enhanced reaction of carbon tetrachloride (CCl4) on Si(100) at room temperature is investigated at primary ion energies of 2 and 9 keV using the secondary ion mass spectrometry (SIMS) technique. Static SIMS shows that CCl4 reacts with Si at room temperature. This surface reaction is enhanced by simultaneous sputtering with an Ar+ ion beam, the reaction rate being higher at 9 keV than at 2 keV. Possible products of surface reaction are discussed. © 1994 Chapman & Hall.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/BF00355966
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1007/BF00355966
dc.description.sourcetitleJournal of Materials Science
dc.description.volume29
dc.description.issue15
dc.description.page4037-4042
dc.description.codenJMTSA
dc.identifier.isiutA1994PB78200021
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