Please use this identifier to cite or link to this item:
Title: Laser patterning of epitaxial graphene for Schottky junction photodetectors
Authors: Singh, R.S.
Nalla, V. 
Chen, W. 
Wee, A.T.S. 
Ji, W. 
Keywords: laser patterning
laser-modified epitaxial graphene
photoconductive detector
Raman spectroscopy
scanning tunneling microscopy
Schottky junction
Issue Date: 26-Jul-2011
Citation: Singh, R.S., Nalla, V., Chen, W., Wee, A.T.S., Ji, W. (2011-07-26). Laser patterning of epitaxial graphene for Schottky junction photodetectors. ACS Nano 5 (7) : 5969-5975. ScholarBank@NUS Repository.
Abstract: Large-area patterning of epitaxial graphene for Schottky junction photodetectors has been demonstrated with a simple laser irradiation method. In this method, semimetal-semiconductor Schottky junctions are created in a controllable pattern between epitaxial graphene (EG) and laser-modified epitaxial graphene (LEG). The zero-biased EG-LEG-EG photodetector exhibits a nanosecond and wavelength-independent photoresponse in a broad-band spectrum from ultraviolet (200 nm) through visible to infrared light (1064 nm), distinctively different from conventional photon detectors. An efficient external photoresponsivity (or efficiency) of ∼0.1 A•W-1 is achieved with a biased interdigitated EG-LEG-EG photodetector. The fabrication method presented here opens a viable route to carbon optoelectronics for a fast and highly efficient photoconductive detector. © 2011 American Chemical Society.
Source Title: ACS Nano
ISSN: 19360851
DOI: 10.1021/nn201757j
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 31, 2023


checked on Jan 31, 2023

Page view(s)

checked on Feb 2, 2023

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.