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|Title:||Laser patterning of epitaxial graphene for Schottky junction photodetectors||Authors:||Singh, R.S.
laser-modified epitaxial graphene
scanning tunneling microscopy
|Issue Date:||26-Jul-2011||Citation:||Singh, R.S., Nalla, V., Chen, W., Wee, A.T.S., Ji, W. (2011-07-26). Laser patterning of epitaxial graphene for Schottky junction photodetectors. ACS Nano 5 (7) : 5969-5975. ScholarBank@NUS Repository. https://doi.org/10.1021/nn201757j||Abstract:||Large-area patterning of epitaxial graphene for Schottky junction photodetectors has been demonstrated with a simple laser irradiation method. In this method, semimetal-semiconductor Schottky junctions are created in a controllable pattern between epitaxial graphene (EG) and laser-modified epitaxial graphene (LEG). The zero-biased EG-LEG-EG photodetector exhibits a nanosecond and wavelength-independent photoresponse in a broad-band spectrum from ultraviolet (200 nm) through visible to infrared light (1064 nm), distinctively different from conventional photon detectors. An efficient external photoresponsivity (or efficiency) of ∼0.1 A•W-1 is achieved with a biased interdigitated EG-LEG-EG photodetector. The fabrication method presented here opens a viable route to carbon optoelectronics for a fast and highly efficient photoconductive detector. © 2011 American Chemical Society.||Source Title:||ACS Nano||URI:||http://scholarbank.nus.edu.sg/handle/10635/95481||ISSN:||19360851||DOI:||10.1021/nn201757j|
|Appears in Collections:||Staff Publications|
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