Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn201757j
Title: Laser patterning of epitaxial graphene for Schottky junction photodetectors
Authors: Singh, R.S.
Nalla, V. 
Chen, W. 
Wee, A.T.S. 
Ji, W. 
Keywords: laser patterning
laser-modified epitaxial graphene
photoconductive detector
Raman spectroscopy
scanning tunneling microscopy
Schottky junction
Issue Date: 26-Jul-2011
Source: Singh, R.S., Nalla, V., Chen, W., Wee, A.T.S., Ji, W. (2011-07-26). Laser patterning of epitaxial graphene for Schottky junction photodetectors. ACS Nano 5 (7) : 5969-5975. ScholarBank@NUS Repository. https://doi.org/10.1021/nn201757j
Abstract: Large-area patterning of epitaxial graphene for Schottky junction photodetectors has been demonstrated with a simple laser irradiation method. In this method, semimetal-semiconductor Schottky junctions are created in a controllable pattern between epitaxial graphene (EG) and laser-modified epitaxial graphene (LEG). The zero-biased EG-LEG-EG photodetector exhibits a nanosecond and wavelength-independent photoresponse in a broad-band spectrum from ultraviolet (200 nm) through visible to infrared light (1064 nm), distinctively different from conventional photon detectors. An efficient external photoresponsivity (or efficiency) of ∼0.1 A•W-1 is achieved with a biased interdigitated EG-LEG-EG photodetector. The fabrication method presented here opens a viable route to carbon optoelectronics for a fast and highly efficient photoconductive detector. © 2011 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/95481
ISSN: 19360851
DOI: 10.1021/nn201757j
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