Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn201757j
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dc.titleLaser patterning of epitaxial graphene for Schottky junction photodetectors
dc.contributor.authorSingh, R.S.
dc.contributor.authorNalla, V.
dc.contributor.authorChen, W.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorJi, W.
dc.date.accessioned2014-10-16T08:48:22Z
dc.date.available2014-10-16T08:48:22Z
dc.date.issued2011-07-26
dc.identifier.citationSingh, R.S., Nalla, V., Chen, W., Wee, A.T.S., Ji, W. (2011-07-26). Laser patterning of epitaxial graphene for Schottky junction photodetectors. ACS Nano 5 (7) : 5969-5975. ScholarBank@NUS Repository. https://doi.org/10.1021/nn201757j
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95481
dc.description.abstractLarge-area patterning of epitaxial graphene for Schottky junction photodetectors has been demonstrated with a simple laser irradiation method. In this method, semimetal-semiconductor Schottky junctions are created in a controllable pattern between epitaxial graphene (EG) and laser-modified epitaxial graphene (LEG). The zero-biased EG-LEG-EG photodetector exhibits a nanosecond and wavelength-independent photoresponse in a broad-band spectrum from ultraviolet (200 nm) through visible to infrared light (1064 nm), distinctively different from conventional photon detectors. An efficient external photoresponsivity (or efficiency) of ∼0.1 A•W-1 is achieved with a biased interdigitated EG-LEG-EG photodetector. The fabrication method presented here opens a viable route to carbon optoelectronics for a fast and highly efficient photoconductive detector. © 2011 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn201757j
dc.sourceScopus
dc.subjectlaser patterning
dc.subjectlaser-modified epitaxial graphene
dc.subjectphotoconductive detector
dc.subjectRaman spectroscopy
dc.subjectscanning tunneling microscopy
dc.subjectSchottky junction
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1021/nn201757j
dc.description.sourcetitleACS Nano
dc.description.volume5
dc.description.issue7
dc.description.page5969-5975
dc.identifier.isiut000293035200078
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