Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4807658

Title:	Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
Authors:	Lin, J. Li, H. Zhang, H. Chen, W.
Issue Date:	20-May-2013
Citation:	Lin, J., Li, H., Zhang, H., Chen, W. (2013-05-20). Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor. Applied Physics Letters 102 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4807658
Abstract:	The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors. © 2013 AIP Publishing LLC.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/94538
ISSN:	00036951
DOI:	10.1063/1.4807658
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check