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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4807658
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dc.titlePlasmonic enhancement of photocurrent in MoS2 field-effect-transistor
dc.contributor.authorLin, J.
dc.contributor.authorLi, H.
dc.contributor.authorZhang, H.
dc.contributor.authorChen, W.
dc.date.accessioned2014-10-16T08:37:13Z
dc.date.available2014-10-16T08:37:13Z
dc.date.issued2013-05-20
dc.identifier.citationLin, J., Li, H., Zhang, H., Chen, W. (2013-05-20). Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor. Applied Physics Letters 102 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4807658
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/94538
dc.description.abstractThe two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4807658
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1063/1.4807658
dc.description.sourcetitleApplied Physics Letters
dc.description.volume102
dc.description.issue20
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000320619300071
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