Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4807658
Title: Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor
Authors: Lin, J.
Li, H.
Zhang, H.
Chen, W. 
Issue Date: 20-May-2013
Citation: Lin, J., Li, H., Zhang, H., Chen, W. (2013-05-20). Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor. Applied Physics Letters 102 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4807658
Abstract: The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/94538
ISSN: 00036951
DOI: 10.1063/1.4807658
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