Adsorption of O 2 and CO 2 on the Si(111)-7 × 7 surfaces

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2012.04.026

Title:	Adsorption of O 2 and CO 2 on the Si(111)-7 × 7 surfaces
Authors:	Wang, S. He, J. Zhang, Y. Xu, G.Q.
Keywords:	Carbon dioxide Oxygen Silicon oxidation X-ray photoelectron spectroscopy
Issue Date:	Sep-2012
Citation:	Wang, S., He, J., Zhang, Y., Xu, G.Q. (2012-09). Adsorption of O 2 and CO 2 on the Si(111)-7 × 7 surfaces. Surface Science 606 (17-18) : 1387-1392. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2012.04.026
Abstract:	The interaction of O 2 and CO 2 with the Si(111)-7 × 7 surface has been studied with X-ray photoelectron spectroscopy (XPS). It was found that both O 2 and CO 2 molecules can readily oxidize the Si(111)-7 × 7 surface to form thin oxide films. Two oxygen species were identified in the oxide film: oxygen atoms binding to on-top sites of adatom/rest atoms with an O 1s binding energy of ~ 533 eV as well as to bridge sites of adatom/rest atom backbonds at ~ 532 eV. These two oxygen species can be interconverted thermally during the annealing process. Due to the low oxidation capability, the silicon oxide film formed by CO 2 has a lower O/Si ratio than that of O 2. © 2012 Elsevier B.V.
Source Title:	Surface Science
URI:	http://scholarbank.nus.edu.sg/handle/10635/93055
ISSN:	00396028
DOI:	10.1016/j.susc.2012.04.026
Appears in Collections:	Staff Publications

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