Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2012.04.026
Title: Adsorption of O 2 and CO 2 on the Si(111)-7 × 7 surfaces
Authors: Wang, S. 
He, J.
Zhang, Y. 
Xu, G.Q. 
Keywords: Carbon dioxide
Oxygen
Silicon oxidation
X-ray photoelectron spectroscopy
Issue Date: Sep-2012
Citation: Wang, S., He, J., Zhang, Y., Xu, G.Q. (2012-09). Adsorption of O 2 and CO 2 on the Si(111)-7 × 7 surfaces. Surface Science 606 (17-18) : 1387-1392. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2012.04.026
Abstract: The interaction of O 2 and CO 2 with the Si(111)-7 × 7 surface has been studied with X-ray photoelectron spectroscopy (XPS). It was found that both O 2 and CO 2 molecules can readily oxidize the Si(111)-7 × 7 surface to form thin oxide films. Two oxygen species were identified in the oxide film: oxygen atoms binding to on-top sites of adatom/rest atoms with an O 1s binding energy of ~ 533 eV as well as to bridge sites of adatom/rest atom backbonds at ~ 532 eV. These two oxygen species can be interconverted thermally during the annealing process. Due to the low oxidation capability, the silicon oxide film formed by CO 2 has a lower O/Si ratio than that of O 2. © 2012 Elsevier B.V.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/93055
ISSN: 00396028
DOI: 10.1016/j.susc.2012.04.026
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Jul 12, 2018

WEB OF SCIENCETM
Citations

1
checked on Jun 5, 2018

Page view(s)

26
checked on Jul 6, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.