Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2012.04.026
DC FieldValue
dc.titleAdsorption of O 2 and CO 2 on the Si(111)-7 × 7 surfaces
dc.contributor.authorWang, S.
dc.contributor.authorHe, J.
dc.contributor.authorZhang, Y.
dc.contributor.authorXu, G.Q.
dc.date.accessioned2014-10-16T08:19:52Z
dc.date.available2014-10-16T08:19:52Z
dc.date.issued2012-09
dc.identifier.citationWang, S., He, J., Zhang, Y., Xu, G.Q. (2012-09). Adsorption of O 2 and CO 2 on the Si(111)-7 × 7 surfaces. Surface Science 606 (17-18) : 1387-1392. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2012.04.026
dc.identifier.issn00396028
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93055
dc.description.abstractThe interaction of O 2 and CO 2 with the Si(111)-7 × 7 surface has been studied with X-ray photoelectron spectroscopy (XPS). It was found that both O 2 and CO 2 molecules can readily oxidize the Si(111)-7 × 7 surface to form thin oxide films. Two oxygen species were identified in the oxide film: oxygen atoms binding to on-top sites of adatom/rest atoms with an O 1s binding energy of ~ 533 eV as well as to bridge sites of adatom/rest atom backbonds at ~ 532 eV. These two oxygen species can be interconverted thermally during the annealing process. Due to the low oxidation capability, the silicon oxide film formed by CO 2 has a lower O/Si ratio than that of O 2. © 2012 Elsevier B.V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.susc.2012.04.026
dc.sourceScopus
dc.subjectCarbon dioxide
dc.subjectOxygen
dc.subjectSilicon oxidation
dc.subjectX-ray photoelectron spectroscopy
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1016/j.susc.2012.04.026
dc.description.sourcetitleSurface Science
dc.description.volume606
dc.description.issue17-18
dc.description.page1387-1392
dc.description.codenSUSCA
dc.identifier.isiut000306823900009
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