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https://doi.org/10.1016/j.physb.2012.03.072
| Title: | Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode | Authors: | Iwan, S. Bambang, S. Zhao, J.L. Tan, S.T. Fan, H.M. Sun, L. Zhang, S. Ryu, H.H. Sun, X.W. |
Keywords: | Electron impact excitation n-ZnO:Er/p-Si heterojunctions Photoluminescence Room temperature USP ZnO:Er |
Issue Date: | 15-Jul-2012 | Citation: | Iwan, S., Bambang, S., Zhao, J.L., Tan, S.T., Fan, H.M., Sun, L., Zhang, S., Ryu, H.H., Sun, X.W. (2012-07-15). Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode. Physica B: Condensed Matter 407 (14) : 2721-2724. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physb.2012.03.072 | Abstract: | Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er 3 ions doped in ZnO films. © 2012 Elsevier B.V. All rights reserved. | Source Title: | Physica B: Condensed Matter | URI: | http://scholarbank.nus.edu.sg/handle/10635/86892 | ISSN: | 09214526 | DOI: | 10.1016/j.physb.2012.03.072 |
| Appears in Collections: | Staff Publications |
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