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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physb.2012.03.072
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dc.titleGreen electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode
dc.contributor.authorIwan, S.
dc.contributor.authorBambang, S.
dc.contributor.authorZhao, J.L.
dc.contributor.authorTan, S.T.
dc.contributor.authorFan, H.M.
dc.contributor.authorSun, L.
dc.contributor.authorZhang, S.
dc.contributor.authorRyu, H.H.
dc.contributor.authorSun, X.W.
dc.date.accessioned2014-10-07T09:56:02Z
dc.date.available2014-10-07T09:56:02Z
dc.date.issued2012-07-15
dc.identifier.citationIwan, S., Bambang, S., Zhao, J.L., Tan, S.T., Fan, H.M., Sun, L., Zhang, S., Ryu, H.H., Sun, X.W. (2012-07-15). Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode. Physica B: Condensed Matter 407 (14) : 2721-2724. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physb.2012.03.072
dc.identifier.issn09214526
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86892
dc.description.abstractErbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er 3 ions doped in ZnO films. © 2012 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.physb.2012.03.072
dc.sourceScopus
dc.subjectElectron impact excitation
dc.subjectn-ZnO:Er/p-Si heterojunctions
dc.subjectPhotoluminescence
dc.subjectRoom temperature
dc.subjectUSP
dc.subjectZnO:Er
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1016/j.physb.2012.03.072
dc.description.sourcetitlePhysica B: Condensed Matter
dc.description.volume407
dc.description.issue14
dc.description.page2721-2724
dc.description.codenPHYBE
dc.identifier.isiut000305468000012
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