Please use this identifier to cite or link to this item:
Title: Ferroelectric properties of (Bi3.15Nd0.85)Ti 3O12 with decreasing film thickness
Authors: Gao, X. 
Wang, J. 
Keywords: Bi4Ti3O12 thin film
Ferroelectric behaviors
Layered perovskite structure
Thickness dependence
Issue Date: Jul-2006
Citation: Gao, X., Wang, J. (2006-07). Ferroelectric properties of (Bi3.15Nd0.85)Ti 3O12 with decreasing film thickness. Journal of Electroceramics 16 (4) : 477-481. ScholarBank@NUS Repository.
Abstract: Film texture and ferroelectric behaviors of (Bi3.15Nd 0.85)Ti3O12 (BNdT) of layered-perovskite structure deposited on Pt/TiO2/Si substrate are dependent on the film thickness. When the film thickness is reduced from ∼240 to ∼120 nm, BNdT grains evolve from a rod-like morphology to a spherical morphology, accompanied by a decrease in average grain size. At the same time, P-E hysteresis transforms from a square-shaped hysteresis loop (2Pr ∼24.1 μC/cm2 at 240 nm) to a relative slimmer hysteresis loop (with a lower 2Pr = 19.8 μC/cm2 at 120 nm). The nonvolatile polarization (Δ P) shows a maximum at the film thickness of 160 nm, where Δ P was measured to be 14.7 μC/cm2 and 6.8 μC/cm2 at 5 V and 3 V, respectively. A small amount of excess bismuth in the film thickness of 130 nm, introduced by co-sputtering, can lead to a much enhanced remanent polarization (2Pr of 21.3 μC/cm2 at 5 V and 15.2 μC/cm 2at 3 V), which is promising for low voltage FRAM applications. © Springer Science + Business Media, LLC 2006.
Source Title: Journal of Electroceramics
ISSN: 13853449
DOI: 10.1007/s10832-006-9901-5
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 12, 2022


checked on Jan 12, 2022

Page view(s)

checked on Jan 13, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.