Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10832-006-9901-5
Title: Ferroelectric properties of (Bi3.15Nd0.85)Ti 3O12 with decreasing film thickness
Authors: Gao, X. 
Wang, J. 
Keywords: Bi4Ti3O12 thin film
Ferroelectric behaviors
FRAM
Layered perovskite structure
Thickness dependence
Issue Date: Jul-2006
Citation: Gao, X., Wang, J. (2006-07). Ferroelectric properties of (Bi3.15Nd0.85)Ti 3O12 with decreasing film thickness. Journal of Electroceramics 16 (4) : 477-481. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-006-9901-5
Abstract: Film texture and ferroelectric behaviors of (Bi3.15Nd 0.85)Ti3O12 (BNdT) of layered-perovskite structure deposited on Pt/TiO2/Si substrate are dependent on the film thickness. When the film thickness is reduced from ∼240 to ∼120 nm, BNdT grains evolve from a rod-like morphology to a spherical morphology, accompanied by a decrease in average grain size. At the same time, P-E hysteresis transforms from a square-shaped hysteresis loop (2Pr ∼24.1 μC/cm2 at 240 nm) to a relative slimmer hysteresis loop (with a lower 2Pr = 19.8 μC/cm2 at 120 nm). The nonvolatile polarization (Δ P) shows a maximum at the film thickness of 160 nm, where Δ P was measured to be 14.7 μC/cm2 and 6.8 μC/cm2 at 5 V and 3 V, respectively. A small amount of excess bismuth in the film thickness of 130 nm, introduced by co-sputtering, can lead to a much enhanced remanent polarization (2Pr of 21.3 μC/cm2 at 5 V and 15.2 μC/cm 2at 3 V), which is promising for low voltage FRAM applications. © Springer Science + Business Media, LLC 2006.
Source Title: Journal of Electroceramics
URI: http://scholarbank.nus.edu.sg/handle/10635/86884
ISSN: 13853449
DOI: 10.1007/s10832-006-9901-5
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