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https://doi.org/10.1007/s10832-006-9901-5
DC Field | Value | |
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dc.title | Ferroelectric properties of (Bi3.15Nd0.85)Ti 3O12 with decreasing film thickness | |
dc.contributor.author | Gao, X. | |
dc.contributor.author | Wang, J. | |
dc.date.accessioned | 2014-10-07T09:55:57Z | |
dc.date.available | 2014-10-07T09:55:57Z | |
dc.date.issued | 2006-07 | |
dc.identifier.citation | Gao, X., Wang, J. (2006-07). Ferroelectric properties of (Bi3.15Nd0.85)Ti 3O12 with decreasing film thickness. Journal of Electroceramics 16 (4) : 477-481. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-006-9901-5 | |
dc.identifier.issn | 13853449 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/86884 | |
dc.description.abstract | Film texture and ferroelectric behaviors of (Bi3.15Nd 0.85)Ti3O12 (BNdT) of layered-perovskite structure deposited on Pt/TiO2/Si substrate are dependent on the film thickness. When the film thickness is reduced from ∼240 to ∼120 nm, BNdT grains evolve from a rod-like morphology to a spherical morphology, accompanied by a decrease in average grain size. At the same time, P-E hysteresis transforms from a square-shaped hysteresis loop (2Pr ∼24.1 μC/cm2 at 240 nm) to a relative slimmer hysteresis loop (with a lower 2Pr = 19.8 μC/cm2 at 120 nm). The nonvolatile polarization (Δ P) shows a maximum at the film thickness of 160 nm, where Δ P was measured to be 14.7 μC/cm2 and 6.8 μC/cm2 at 5 V and 3 V, respectively. A small amount of excess bismuth in the film thickness of 130 nm, introduced by co-sputtering, can lead to a much enhanced remanent polarization (2Pr of 21.3 μC/cm2 at 5 V and 15.2 μC/cm 2at 3 V), which is promising for low voltage FRAM applications. © Springer Science + Business Media, LLC 2006. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s10832-006-9901-5 | |
dc.source | Scopus | |
dc.subject | Bi4Ti3O12 thin film | |
dc.subject | Ferroelectric behaviors | |
dc.subject | FRAM | |
dc.subject | Layered perovskite structure | |
dc.subject | Thickness dependence | |
dc.type | Conference Paper | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.description.doi | 10.1007/s10832-006-9901-5 | |
dc.description.sourcetitle | Journal of Electroceramics | |
dc.description.volume | 16 | |
dc.description.issue | 4 | |
dc.description.page | 477-481 | |
dc.description.coden | JOELF | |
dc.identifier.isiut | 000241750700042 | |
Appears in Collections: | Staff Publications |
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