Fatigue behavior of heterostructured Pb(Zr, Ti)O3/(Bi, Nd) 4Ti3O12 ferroelectric thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2347697

Title:	Fatigue behavior of heterostructured Pb(Zr, Ti)O3/(Bi, Nd) 4Ti3O12 ferroelectric thin films
Authors:	Sim, C.H. Soon, H.P. Zhou, Z.H. Wang, J.
Issue Date:	2006
Citation:	Sim, C.H., Soon, H.P., Zhou, Z.H., Wang, J. (2006). Fatigue behavior of heterostructured Pb(Zr, Ti)O3/(Bi, Nd) 4Ti3O12 ferroelectric thin films. Applied Physics Letters 89 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2347697
Abstract:	Heterolayered Pb(Zr0.52Ti0.48)O3/(Bi 3.15Nd0.85)Ti3O12 (PZT/BNT) thin films were synthesized via a route of combining sol-gel and rf sputtering. A fatigue anomaly is observed for the heterolayered PZT/BNT thin films, where a switchable polarization peak, which is more than five times higher than that of the virgin state, occurs upon polarization switching for 108-10 9 cycles. Interestingly it shifts towards smaller numbers of switching cycles at elevated temperatures. Both the aging and dielectric behavior suggest that the fatigue anomaly is related to the defects accumulated at the interfaces in the heterolayers. © 2006 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/86326
ISSN:	00036951
DOI:	10.1063/1.2347697
Appears in Collections:	Staff Publications

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