Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2347697
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dc.titleFatigue behavior of heterostructured Pb(Zr, Ti)O3/(Bi, Nd) 4Ti3O12 ferroelectric thin films
dc.contributor.authorSim, C.H.
dc.contributor.authorSoon, H.P.
dc.contributor.authorZhou, Z.H.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-07T09:49:23Z
dc.date.available2014-10-07T09:49:23Z
dc.date.issued2006
dc.identifier.citationSim, C.H., Soon, H.P., Zhou, Z.H., Wang, J. (2006). Fatigue behavior of heterostructured Pb(Zr, Ti)O3/(Bi, Nd) 4Ti3O12 ferroelectric thin films. Applied Physics Letters 89 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2347697
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86326
dc.description.abstractHeterolayered Pb(Zr0.52Ti0.48)O3/(Bi 3.15Nd0.85)Ti3O12 (PZT/BNT) thin films were synthesized via a route of combining sol-gel and rf sputtering. A fatigue anomaly is observed for the heterolayered PZT/BNT thin films, where a switchable polarization peak, which is more than five times higher than that of the virgin state, occurs upon polarization switching for 108-10 9 cycles. Interestingly it shifts towards smaller numbers of switching cycles at elevated temperatures. Both the aging and dielectric behavior suggest that the fatigue anomaly is related to the defects accumulated at the interfaces in the heterolayers. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2347697
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.2347697
dc.description.sourcetitleApplied Physics Letters
dc.description.volume89
dc.description.issue12
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000240680300090
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