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Title: Electrical behavior and oxygen vacancies in BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 thin film
Authors: Wu, J. 
Kang, G.
Wang, J. 
Issue Date: 2009
Citation: Wu, J., Kang, G., Wang, J. (2009). Electrical behavior and oxygen vacancies in BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 thin film. Applied Physics Letters 95 (19) : -. ScholarBank@NUS Repository.
Abstract: Multiferroic bilayered thin films consisting of BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 (BNBT) and BiFeO3 (BFO) nanolayers were successfully grown on Pt/ TiO2/SiO2/Si substrates via a combined sol-gel and radio frequency sputtering route. The bilayered BFO/BNBT thin film with (110) orientation and dense texture exhibits excellent ferroelectric and dielectric behavior (e.g., 2 Pr ∼79.7 μC/ cm2, 2 Ec ∼772.6 kV/cm, εr ∼178, and tan δ∼0.03), together with a long fatigue endurance up to 1× 1010 switching cycles, while the desired magnetic behavior is well retained. Impedance study suggested that the second ionization of oxygen vacancies was involved in the conduction of the bilayered BFO/BNBT thin film. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.3259655
Appears in Collections:Staff Publications

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