Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3259655
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dc.titleElectrical behavior and oxygen vacancies in BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 thin film
dc.contributor.authorWu, J.
dc.contributor.authorKang, G.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-07T09:48:54Z
dc.date.available2014-10-07T09:48:54Z
dc.date.issued2009
dc.identifier.citationWu, J., Kang, G., Wang, J. (2009). Electrical behavior and oxygen vacancies in BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 thin film. Applied Physics Letters 95 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3259655
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86285
dc.description.abstractMultiferroic bilayered thin films consisting of BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 (BNBT) and BiFeO3 (BFO) nanolayers were successfully grown on Pt/ TiO2/SiO2/Si substrates via a combined sol-gel and radio frequency sputtering route. The bilayered BFO/BNBT thin film with (110) orientation and dense texture exhibits excellent ferroelectric and dielectric behavior (e.g., 2 Pr ∼79.7 μC/ cm2, 2 Ec ∼772.6 kV/cm, εr ∼178, and tan δ∼0.03), together with a long fatigue endurance up to 1× 1010 switching cycles, while the desired magnetic behavior is well retained. Impedance study suggested that the second ionization of oxygen vacancies was involved in the conduction of the bilayered BFO/BNBT thin film. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3259655
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3259655
dc.description.sourcetitleApplied Physics Letters
dc.description.volume95
dc.description.issue19
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000272756600056
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