Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3259655
Title: Electrical behavior and oxygen vacancies in BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 thin film
Authors: Wu, J. 
Kang, G.
Wang, J. 
Issue Date: 2009
Citation: Wu, J., Kang, G., Wang, J. (2009). Electrical behavior and oxygen vacancies in BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 thin film. Applied Physics Letters 95 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3259655
Abstract: Multiferroic bilayered thin films consisting of BiFeO3/[(Bi 1/2Na1/2)0.94Ba0.06] TiO3 (BNBT) and BiFeO3 (BFO) nanolayers were successfully grown on Pt/ TiO2/SiO2/Si substrates via a combined sol-gel and radio frequency sputtering route. The bilayered BFO/BNBT thin film with (110) orientation and dense texture exhibits excellent ferroelectric and dielectric behavior (e.g., 2 Pr ∼79.7 μC/ cm2, 2 Ec ∼772.6 kV/cm, εr ∼178, and tan δ∼0.03), together with a long fatigue endurance up to 1× 1010 switching cycles, while the desired magnetic behavior is well retained. Impedance study suggested that the second ionization of oxygen vacancies was involved in the conduction of the bilayered BFO/BNBT thin film. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86285
ISSN: 00036951
DOI: 10.1063/1.3259655
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

48
checked on Dec 11, 2018

WEB OF SCIENCETM
Citations

44
checked on Dec 11, 2018

Page view(s)

48
checked on Dec 7, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.