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Title: Charged defects and their effects on electrical behavior in Bi 1-x Lax FeO3 thin films
Authors: Wang, Y. 
Zheng, R.Y. 
Sim, C.H. 
Wang, J. 
Issue Date: 2009
Citation: Wang, Y., Zheng, R.Y., Sim, C.H., Wang, J. (2009). Charged defects and their effects on electrical behavior in Bi 1-x Lax FeO3 thin films. Journal of Applied Physics 105 (1) : -. ScholarBank@NUS Repository.
Abstract: Ferroelectric and dielectric characteristics of Bi1-x La x FeO3 thin films deposited on SrRuO3 as bottom electrode have been investigated. In accordance with the Rayleigh model, it is in principle established that La doping in Bi FeO3 effectively reduces the concentration of charged defects and dielectric loss, although there is a slight deviation at the high level of La doping (x=0.2). This departure is attributed to the reversible bending movement of pinned 180° domain walls, which contributes to the dielectric permittivity nonlinearly without inducing loss. In addition, the competition between domain wall pinning and depinning is determined to be the dominant fatigue mechanism, as shown by the enhanced fatigue endurance at the high La-doping level, test frequency, and electrical field. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.3065473
Appears in Collections:Staff Publications

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