Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3065473
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dc.titleCharged defects and their effects on electrical behavior in Bi 1-x Lax FeO3 thin films
dc.contributor.authorWang, Y.
dc.contributor.authorZheng, R.Y.
dc.contributor.authorSim, C.H.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-07T09:48:03Z
dc.date.available2014-10-07T09:48:03Z
dc.date.issued2009
dc.identifier.citationWang, Y., Zheng, R.Y., Sim, C.H., Wang, J. (2009). Charged defects and their effects on electrical behavior in Bi 1-x Lax FeO3 thin films. Journal of Applied Physics 105 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3065473
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86212
dc.description.abstractFerroelectric and dielectric characteristics of Bi1-x La x FeO3 thin films deposited on SrRuO3 as bottom electrode have been investigated. In accordance with the Rayleigh model, it is in principle established that La doping in Bi FeO3 effectively reduces the concentration of charged defects and dielectric loss, although there is a slight deviation at the high level of La doping (x=0.2). This departure is attributed to the reversible bending movement of pinned 180° domain walls, which contributes to the dielectric permittivity nonlinearly without inducing loss. In addition, the competition between domain wall pinning and depinning is determined to be the dominant fatigue mechanism, as shown by the enhanced fatigue endurance at the high La-doping level, test frequency, and electrical field. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3065473
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3065473
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume105
dc.description.issue1
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000262534100182
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