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|Title:||Growth of Si nanowires by thermal evaporation||Authors:||Pan, H.
|Issue Date:||Apr-2005||Citation:||Pan, H., Lim, S., Poh, C., Sun, H., Wu, X., Feng, Y., Lin, J. (2005-04). Growth of Si nanowires by thermal evaporation. Nanotechnology 16 (4) : 417-421. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/16/4/014||Abstract:||Si nanowires have been produced in high yield on Si substrate with the absence of a catalyst by thermal evaporation at high temperature. The self-induced growth of Si nanowires suggests that a catalyst should be not essential. Transmission electron microscopic investigation shows that the nanowires, with a diameter ranging from 10 to 100 nm and length up to a few hundred microns, are crystalline or amorphous. The self-induced solid-liquid-solid model and oxygen-assisted vapour-solid mode are employed to explain the results. Raman spectroscopy shows an asymmetric peak around 512 cm -1, with a deviation of 9 cm -1 from that of the bulk crystalline Si. XRD and TEM were used to characterize the Si nanowires. The effects of growth conditions on quality and production were investigated. © 2005 IOP Publishing Ltd.||Source Title:||Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/85254||ISSN:||09574484||DOI:||10.1088/0957-4484/16/4/014|
|Appears in Collections:||Staff Publications|
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