Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/16/4/014
Title: Growth of Si nanowires by thermal evaporation
Authors: Pan, H. 
Lim, S. 
Poh, C. 
Sun, H.
Wu, X.
Feng, Y. 
Lin, J. 
Issue Date: Apr-2005
Citation: Pan, H., Lim, S., Poh, C., Sun, H., Wu, X., Feng, Y., Lin, J. (2005-04). Growth of Si nanowires by thermal evaporation. Nanotechnology 16 (4) : 417-421. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/16/4/014
Abstract: Si nanowires have been produced in high yield on Si substrate with the absence of a catalyst by thermal evaporation at high temperature. The self-induced growth of Si nanowires suggests that a catalyst should be not essential. Transmission electron microscopic investigation shows that the nanowires, with a diameter ranging from 10 to 100 nm and length up to a few hundred microns, are crystalline or amorphous. The self-induced solid-liquid-solid model and oxygen-assisted vapour-solid mode are employed to explain the results. Raman spectroscopy shows an asymmetric peak around 512 cm -1, with a deviation of 9 cm -1 from that of the bulk crystalline Si. XRD and TEM were used to characterize the Si nanowires. The effects of growth conditions on quality and production were investigated. © 2005 IOP Publishing Ltd.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/85254
ISSN: 09574484
DOI: 10.1088/0957-4484/16/4/014
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