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|Title:||Role of oxygen exposure in different positions in the synthetic spin valves||Authors:||Li, K.
|Issue Date:||15-May-2003||Citation:||Li, K., Han, G., Qiu, J., Luo, P., Guo, Z., Zheng, Y., Wu, Y. (2003-05-15). Role of oxygen exposure in different positions in the synthetic spin valves. Journal of Applied Physics 93 (10 3) : 7708-7710. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555773||Abstract:||The magnetoresistance (MR) properties of a basic Ta/NiFe/IrMn/CoFe/Ru/CoFe/Cu/CoFe/Cu/Ta synthetic spin valves (SV) system was systematically studied by using O2-soaked layers in five different positions. It was found that the crystal structure does not significantly change at an optimized O2 soaking dose (OSD) where the MR ratio was maximal. Results showed that increasing the spin-dependent coefficient and reducing the diffusion scattering coefficient either at the interface or within the ferromagnetic (FM) layers could enhance MR ratio.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/84150||ISSN:||00218979||DOI:||10.1063/1.1555773|
|Appears in Collections:||Staff Publications|
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