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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1555773
DC FieldValue
dc.titleRole of oxygen exposure in different positions in the synthetic spin valves
dc.contributor.authorLi, K.
dc.contributor.authorHan, G.
dc.contributor.authorQiu, J.
dc.contributor.authorLuo, P.
dc.contributor.authorGuo, Z.
dc.contributor.authorZheng, Y.
dc.contributor.authorWu, Y.
dc.date.accessioned2014-10-07T04:49:22Z
dc.date.available2014-10-07T04:49:22Z
dc.date.issued2003-05-15
dc.identifier.citationLi, K., Han, G., Qiu, J., Luo, P., Guo, Z., Zheng, Y., Wu, Y. (2003-05-15). Role of oxygen exposure in different positions in the synthetic spin valves. Journal of Applied Physics 93 (10 3) : 7708-7710. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555773
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84150
dc.description.abstractThe magnetoresistance (MR) properties of a basic Ta/NiFe/IrMn/CoFe/Ru/CoFe/Cu/CoFe/Cu/Ta synthetic spin valves (SV) system was systematically studied by using O2-soaked layers in five different positions. It was found that the crystal structure does not significantly change at an optimized O2 soaking dose (OSD) where the MR ratio was maximal. Results showed that increasing the spin-dependent coefficient and reducing the diffusion scattering coefficient either at the interface or within the ferromagnetic (FM) layers could enhance MR ratio.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1555773
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1555773
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue10 3
dc.description.page7708-7710
dc.description.codenJAPIA
dc.identifier.isiut000182822600025
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