Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1555773
Title: Role of oxygen exposure in different positions in the synthetic spin valves
Authors: Li, K.
Han, G.
Qiu, J.
Luo, P.
Guo, Z.
Zheng, Y.
Wu, Y. 
Issue Date: 15-May-2003
Citation: Li, K., Han, G., Qiu, J., Luo, P., Guo, Z., Zheng, Y., Wu, Y. (2003-05-15). Role of oxygen exposure in different positions in the synthetic spin valves. Journal of Applied Physics 93 (10 3) : 7708-7710. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555773
Abstract: The magnetoresistance (MR) properties of a basic Ta/NiFe/IrMn/CoFe/Ru/CoFe/Cu/CoFe/Cu/Ta synthetic spin valves (SV) system was systematically studied by using O2-soaked layers in five different positions. It was found that the crystal structure does not significantly change at an optimized O2 soaking dose (OSD) where the MR ratio was maximal. Results showed that increasing the spin-dependent coefficient and reducing the diffusion scattering coefficient either at the interface or within the ferromagnetic (FM) layers could enhance MR ratio.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/84150
ISSN: 00218979
DOI: 10.1063/1.1555773
Appears in Collections:Staff Publications

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