Please use this identifier to cite or link to this item:
Title: Raman scattering spectra in C-implanted GaN epilayers
Authors: Sun, W.H.
Chua, S.J.
Zhang, J. 
Wang, L.S.
Hao, M.S.
Chen, K.M.
Qin, G.G.
Issue Date: 2001
Citation: Sun, W.H.,Chua, S.J.,Zhang, J.,Wang, L.S.,Hao, M.S.,Chen, K.M.,Qin, G.G. (2001). Raman scattering spectra in C-implanted GaN epilayers. Materials Research Society Symposium Proceedings 680 : 256-261. ScholarBank@NUS Repository.
Abstract: We have investigated the Raman scattering spectra in C-implanted GaN epilayers. (a) In as-implanted GaN, new Raman bands at 293, 376, 669, 1027, 1094 and 1053 cm-1 appeared. From phonon-dispersion curves for hexagonal GaN, the 293 cm-1 and 669 cm-1 bands were tentatively assigned to the highest acoustic-phonon branch and the optical-phonon branch at the Brillouin zone boundaries, respectively; the 1027 and 1094 cm-1 peaks might be caused by two-phonon scattering involving the 376 and 669 cm -1 phonons, and the 376 cm-1 and AI(LO) phonons respectively. (b) Two sharp bands at ∼1350 and ∼1600 cm-1 were observed in the Raman spectra of carbon-implanted GaN after post-implantation annealing treatments. The intensities of these two bands increased while their full widths at half maximum decreased with increasing annealing temperature. We assigned them, respectively, to the D and G bands of small graphite crystallites arising from C implantation and post-implantation annealing. The observation of these two bands indicates the formation of small graphite crystallites in C-implanted GaN. © 2001 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
ISBN: 1558996168
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.