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|Title:||Raman scattering spectra in C-implanted GaN epilayers|
|Citation:||Sun, W.H.,Chua, S.J.,Zhang, J.,Wang, L.S.,Hao, M.S.,Chen, K.M.,Qin, G.G. (2001). Raman scattering spectra in C-implanted GaN epilayers. Materials Research Society Symposium Proceedings 680 : 256-261. ScholarBank@NUS Repository.|
|Abstract:||We have investigated the Raman scattering spectra in C-implanted GaN epilayers. (a) In as-implanted GaN, new Raman bands at 293, 376, 669, 1027, 1094 and 1053 cm-1 appeared. From phonon-dispersion curves for hexagonal GaN, the 293 cm-1 and 669 cm-1 bands were tentatively assigned to the highest acoustic-phonon branch and the optical-phonon branch at the Brillouin zone boundaries, respectively; the 1027 and 1094 cm-1 peaks might be caused by two-phonon scattering involving the 376 and 669 cm -1 phonons, and the 376 cm-1 and AI(LO) phonons respectively. (b) Two sharp bands at ∼1350 and ∼1600 cm-1 were observed in the Raman spectra of carbon-implanted GaN after post-implantation annealing treatments. The intensities of these two bands increased while their full widths at half maximum decreased with increasing annealing temperature. We assigned them, respectively, to the D and G bands of small graphite crystallites arising from C implantation and post-implantation annealing. The observation of these two bands indicates the formation of small graphite crystallites in C-implanted GaN. © 2001 Materials Research Society.|
|Source Title:||Materials Research Society Symposium Proceedings|
|Appears in Collections:||Staff Publications|
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