Molecular-beam Epitaxial Growth of α-Zn0.05Sr 0.95S Codoped with Eu and Sm on MgO(001) Substrate Via α-MnS Buffer Layer

Abstract

High quality α-ZnxSr1-xS with a single-phase rocksalt structure can be epitaxially deposited on (001) MgO substrate using α-MnS buffer layer under appropriate growth conditions. We observed efficient infrared-stimulated luminescence (ISL) with a peak at ∼ 620 nm when visible-light-irradiated α-Zn0.05Sr0.95S:Eu,Sm thin films were stimulated with IR light. The observed ISL intensity is stronger in Zn0.05Sr0.95S:Eu,Sm as compared to SrS:Eu,Sm. We propose that the ISL emission intensity in SrS:Eu, Sm is enhanced not only by the inclusion of Zn but also due to the growth of film at high substrate temperature. © 2005 American Institute of Physics.