Please use this identifier to cite or link to this item:
|Title:||Molecular-beam Epitaxial Growth of α-Zn0.05Sr 0.95S Codoped with Eu and Sm on MgO(001) Substrate Via α-MnS Buffer Layer|
|Citation:||Chen, C.,Teo, K.L.,Chong, T.C. (2005-06-30). Molecular-beam Epitaxial Growth of α-Zn0.05Sr 0.95S Codoped with Eu and Sm on MgO(001) Substrate Via α-MnS Buffer Layer. AIP Conference Proceedings 772 : 167-168. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1994046|
|Abstract:||High quality α-ZnxSr1-xS with a single-phase rocksalt structure can be epitaxially deposited on (001) MgO substrate using α-MnS buffer layer under appropriate growth conditions. We observed efficient infrared-stimulated luminescence (ISL) with a peak at ∼ 620 nm when visible-light-irradiated α-Zn0.05Sr0.95S:Eu,Sm thin films were stimulated with IR light. The observed ISL intensity is stronger in Zn0.05Sr0.95S:Eu,Sm as compared to SrS:Eu,Sm. We propose that the ISL emission intensity in SrS:Eu, Sm is enhanced not only by the inclusion of Zn but also due to the growth of film at high substrate temperature. © 2005 American Institute of Physics.|
|Source Title:||AIP Conference Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 16, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.