Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1994046
Title: Molecular-beam Epitaxial Growth of α-Zn0.05Sr 0.95S Codoped with Eu and Sm on MgO(001) Substrate Via α-MnS Buffer Layer
Authors: Chen, C.
Teo, K.L. 
Chong, T.C.
Issue Date: 30-Jun-2005
Citation: Chen, C.,Teo, K.L.,Chong, T.C. (2005-06-30). Molecular-beam Epitaxial Growth of α-Zn0.05Sr 0.95S Codoped with Eu and Sm on MgO(001) Substrate Via α-MnS Buffer Layer. AIP Conference Proceedings 772 : 167-168. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1994046
Abstract: High quality α-ZnxSr1-xS with a single-phase rocksalt structure can be epitaxially deposited on (001) MgO substrate using α-MnS buffer layer under appropriate growth conditions. We observed efficient infrared-stimulated luminescence (ISL) with a peak at ∼ 620 nm when visible-light-irradiated α-Zn0.05Sr0.95S:Eu,Sm thin films were stimulated with IR light. The observed ISL intensity is stronger in Zn0.05Sr0.95S:Eu,Sm as compared to SrS:Eu,Sm. We propose that the ISL emission intensity in SrS:Eu, Sm is enhanced not only by the inclusion of Zn but also due to the growth of film at high substrate temperature. © 2005 American Institute of Physics.
Source Title: AIP Conference Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83976
ISBN: 0735402574
ISSN: 0094243X
DOI: 10.1063/1.1994046
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