Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1994046
DC FieldValue
dc.titleMolecular-beam Epitaxial Growth of α-Zn0.05Sr 0.95S Codoped with Eu and Sm on MgO(001) Substrate Via α-MnS Buffer Layer
dc.contributor.authorChen, C.
dc.contributor.authorTeo, K.L.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:47:22Z
dc.date.available2014-10-07T04:47:22Z
dc.date.issued2005-06-30
dc.identifier.citationChen, C.,Teo, K.L.,Chong, T.C. (2005-06-30). Molecular-beam Epitaxial Growth of α-Zn0.05Sr 0.95S Codoped with Eu and Sm on MgO(001) Substrate Via α-MnS Buffer Layer. AIP Conference Proceedings 772 : 167-168. ScholarBank@NUS Repository. <a href="https://doi.org/10.1063/1.1994046" target="_blank">https://doi.org/10.1063/1.1994046</a>
dc.identifier.isbn0735402574
dc.identifier.issn0094243X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83976
dc.description.abstractHigh quality α-ZnxSr1-xS with a single-phase rocksalt structure can be epitaxially deposited on (001) MgO substrate using α-MnS buffer layer under appropriate growth conditions. We observed efficient infrared-stimulated luminescence (ISL) with a peak at ∼ 620 nm when visible-light-irradiated α-Zn0.05Sr0.95S:Eu,Sm thin films were stimulated with IR light. The observed ISL intensity is stronger in Zn0.05Sr0.95S:Eu,Sm as compared to SrS:Eu,Sm. We propose that the ISL emission intensity in SrS:Eu, Sm is enhanced not only by the inclusion of Zn but also due to the growth of film at high substrate temperature. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1994046
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1994046
dc.description.sourcetitleAIP Conference Proceedings
dc.description.volume772
dc.description.page167-168
dc.identifier.isiutNOT_IN_WOS
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