Please use this identifier to cite or link to this item:
https://doi.org/10.1109/RFIT.2012.6401630
| Title: | High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C | Authors: | Pathrose, J. Gong, X. Zou, L. Koh, J. Chai, K.T.C. Je, M. Xu, Y.P. |
Keywords: | Bandgap Reference High Temperature Op-amp Offset SOI Temperature Compensation |
Issue Date: | 2012 | Citation: | Pathrose, J.,Gong, X.,Zou, L.,Koh, J.,Chai, K.T.C.,Je, M.,Xu, Y.P. (2012). High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C. Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 : 110-112. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIT.2012.6401630 | Abstract: | This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples. © 2012 IEEE. | Source Title: | Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 | URI: | http://scholarbank.nus.edu.sg/handle/10635/83794 | ISBN: | 9781467323048 | DOI: | 10.1109/RFIT.2012.6401630 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.